Mostly True
The Korea Evaluation Institute of Electric Technology (KEIT) has revised its defect luminescence criteria for silicon carbide (SiC) power semiconductors for the first time in 15 years, updating the technical standard that governs how defects in SiC power devices are assessed through luminescence-based inspection.
The revision marks the first change to the defect luminescence criteria since the standard was originally established roughly 15 years ago. SiC power semiconductors are increasingly used in electric vehicles, power infrastructure and industrial applications, where detection of crystal defects is a key quality control step.
The updated criteria concern the luminescence benchmarks used to evaluate defects in SiC power semiconductor wafers and devices. Details of the specific numerical changes and the scope of application were not included in the available information, and the exact effective date of the revised standard remains unconfirmed.
The move reflects the maturation of the domestic SiC power semiconductor sector, which has pressed for updated inspection standards suited to current-generation device designs rather than criteria set more than a decade ago.
The claim that KEIT revised its SiC power semiconductor defect luminescence criteria for the first time in 15 years is Mostly True.