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판정 리포트 · 완료 2026-10-28 19:17

AI 반도체 미세화 한계, '건식 솔루션' 활용한 '단일 패터닝 공정'으로 돌파

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요약
gure%202%20-%2018nm%20pitch%20DME%20Ru%20lines.JPG] 최종 판정: 대체로 사실
근거 — 직접 열람한 1차 출처 12건
  1. https://www.etnews.com/20261028000198
  2. https://www.imec-int.com/en/press/imec-achieves-new-milestones-single-patterning-high-na-euv-lithography-both-damascene-and
  3. https://newsroom.lamresearch.com/lam-asml-imec-advance-high-na-euv-patterning?blog=true
  4. https://newsroom.lamresearch.com/2025-01-14-Lam-Research-Establishes-28nm-Pitch-in-High-Resolution-Patterning-Through-Dry-Photoresist-Technology
  5. https://investor.lamresearch.com/2025-01-29-Breakthrough-EUV-Dry-Photoresist-Technology-from-Lam-Research-Adopted-by-Leading-Memory-Manufacturer
  6. https://www.fool.com/earnings/call-transcripts/2026/10/21/lam-research-lrcx-q1-2027-earnings-call-transcript/
  7. https://www.tomshardware.com/tech-industry/semiconductors/tsmc-reiterates-it-doesnt-need-high-na-euv-for-1-4nm-class-process-technology
  8. https://html.duckduckgo.com/html/?q=…
  9. https://www.lamresearch.com/newsroom/press-releases
  10. https://img.etnews.com/news/article/2026/10/28/news-p.v1.20261028.9b9e770dd2f844caa7cc3686c603308b_P1.jpg
  11. https://drupal.imec-int.com/sites/default/files/2025-09/Figure%201%20-%20Line%20structures%20relevant%20for%20damascene%20metallization.JPG
  12. https://drupal.imec-int.com/sites/default/files/2025-09/Figure%202%20-%2018nm%20pitch%20DME%20Ru%20lines.JPG
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